Process for the production of photo-resist structures.

摘要

This invention relates to lithographic patterning, particularly in fabrication of integrated circuitry, which is based on the photoinduced migration of silver into germanium selenide or other glassy material of appropriate absorption cross section for a chosen actinic radiation. Resists which are negative-acting yield high resolution attributed to initial introduction of the silver in chemically combined form chosen so as to result in formation of a silver compound with a glass component with the compound serving as silver source. Removal of excess silver-containing material is engineered on the basis of the form of silver introduction and results in conversion to a water solubile form. The developed, patterned resist may be used as a mask in a subsequent treatment of exposed portions of an underlying surface, such as etching, metallization, etc. An embodiment in which the now developed patterned resist serves as a dry etching mask during delineation of a relatively thick underlying layer or organic material is also commercially feasible. This procedure is particularly advantageous for use on partially processed circuitry in which prior operations have resulted in surface steps.