Apparatus for chemical etching of a wafer material

摘要

An apparatus is provided for chemically etching, for example, a semiconductor wafer material in an etching solution to remove the surface strain caused by mechanical working such as lapping and polishing. The apparatus comprises a disk rotatable around an axis in the solution and provided on the surface with groove-like liquid flow channels and a means for holding the wafer closely side-by-side to face the rotatable disk and the rotatable disk and the wafer are each rotated around its own axis with simultaneous reciprocative movement of the wafer along a radial direction of the disk so that very high degree of uniformity is ensured in the etching effect on the wafer surface.