| 摘要 |
a) Process for producing transparent films of stannic oxide on a heated substrate. b) The process makes it possible to produce electrically conductive films based on tin oxide by employing gaseous chemical compounds which react to form a tin-fluorine bond at a temperature which (1) is sufficiently high for the molecule containing the newly formed tin-fluorine bond to remain in the vapour phase, and (2) sufficiently low for the oxidation of this molecule to take place only after the indicated molecular rearrangement. Means for making use of this process are also described. The films thus prepared have a surface resistance which can go down to 1 ohm per square centimetre when the film thickness is approximately one micron. The films thus obtained reflect infrared radiations remarkably well. The process is employed in particular for the production of transparent conductive coatings for solar cells, photoconductive cells, electrooptical devices with liquid crystals, photoelectrochemical cells and many other optoelectronic devices. |
