| 摘要 |
PURPOSE:To simplify the titled process reducing the required time remarkably by a method wherein reacting material formed by photochemical initiation adheres to a substrate to form patterns. CONSTITUTION:ArF excimer laser beams are focussed on a silicon substrate 4 through a melted rock crystal window 5 using a melted rock crystal lens 3 to image a mask 2 on the silicon substrate 4. Gas mixture comprising monosilane SiH4 and laughing gas N2O as reacting material is introduced into a vacuum vessel while SiO2 is separated to adhere to a position of substrate 4 where imaging beams are irradiated. Infrared parallel beams 8 are focussed on the image through the lens 3 to heat the substrate 4 up to the temperature exceeding 250 deg.C forming a transparent and very adhesive SiO2 film. Similar patterns suitable for mass production may be transferred constantly since mechanical movements may be reduced by means of utilizing a mask. |
