INTEGRATED CIRCUIT HAVING BURIED OXIDE ISOLATION AND LOW RESISTIVITY SUBSTRATE FOR POWER SUPPLY INTERCONNECTION

摘要

An integrated circuit power supply interconnection technique having a highly doped, low resistivity substrate (17) for distribution of the integrated circuit's most positive supply voltage. The substrate functions as the most positive voltage point and accommodates devices that are normally connected directly to this most positive supply voltage. A dielectric buried layer (21) overlies a portion of the substrate (17) and isolates the substrate supply voltage from devices that are not connected directly to the most positive supply voltage.