| 摘要 |
PURPOSE:To increase current gains and capacitance driving multi-steps by connecting second and third electrodes to a first electrode through first and second tunnel barrier layers and connecting a fourth electrode to the first electrode while being separated by the diffusion length or less of quasi-particles. CONSTITUTION:A Nb film is formed onto an Si substrate 10, a first superconducting electrode 4 is manufactured through plasma etching, and SiO2 is deposited through a resistance heating evaporation method, and processed through a lift-off method to shape an inter-layer insulating film 8. A tunnel barrier layer 6 is formed through plasma oxidation, a Pb film is evaporated, a second superconductive electrode 3 is prepared, the end section of the electrode 3 is plasma-oxidized to shape a tunnel barrier layer 5, and a Pb film is evaporated, and processed through the lift-off method to acquire a fourth superconductive electrode 1. SiO2 is deposited and processed through a lift method to shape an inter-layer insulating layer 9, and a Pb film is evaporated and processed to obtain a third superconductive electrode 2. Accordingly, high current gains and capacitance for driving multi-steps are acquired while facilitating integration, thus improving reliability. |
