| 摘要 |
PURPOSE:To coat even a semiconductor wafer with a large diameter with resist overall the surface in an even thickness by a method wherein the shape and arrangement of multiple coating nozzle openings are specified so that a resist solution dripped on a semiconductor wafer may be spread on the surface of the wafer. CONSTITUTION:Multiple nozzle openings 17a are formed on a nozzle surface so that resist solution 23 may be dripped on the surface of a semiconductor wafer with large diameter to be surface-spread on the wafer. The multiple openings 17a are arranged to be distributed on the nozzle surface so that they are scattered in the central part while coming nearer in the peripheral part. The resist solution 23 dripped from each nozzle opening 17a is spread on the surface of a wafer 21 with a large diameter in an even thickness within the specified range. Later the resist solution 23 may be evenly spread overall the surface of the wafer 21 forming a thin film reaching the outer edge part by the rotary centrifugal force before the solvent component is volatized while after the solvent component is volatized, the sensitive component only may be coated in an even thickness. |
