| 摘要 |
PURPOSE:To simply manufacture a thermoionic transistor and a resonance tunneling thermionic transistor on the same substrate by a method wherein an impurity is introduced in the part to be formed as the major region of the thermionic transistor and the function of the superlattice to be used for the resonance tunneling thermionic transistor in the major region is made to selectively lose. CONSTITUTION:A photo resist film 12 having an opening 12A to correspond to the part to be formed as the major region for making a thermionic transistor TR is formed. Si ions are implanted using the film 12 as a mask and an N-type layer 13 is formed. Then, a heat treatment is performed by a lamp annealing method and the layer 13, wherein the implanted impurity is activated, is turned into an actually workable state. Thereby, it becomes impossible more for the function of the layer 13 to function as a superlattice in the part of the layer 3. As a result, the thermionic TR and a resonance tunneling thermionic transistor TR can be simply integrated on the same substrate 11. |
