| 摘要 |
PURPOSE: To enhance sensitivity of a device by a method wherein organosilane is separated on devices of an electrolyte oxide semiconductor type or CHEMFET type by plasma-deposition. CONSTITUTION: Organosilane, particularly alkylsiloxane, is separated on device silicon or silicon oxide substrates of EOS(an electrolyte-oxide-semiconductor) type or CHEMFET type. In this method, an electromagnetic field of radio frequency is applied to a material substance of gas phase using plasma- deposition (or a plasma polymerizing method), so that the substance to which activities required for polymerizing reaction are given is produced. In the deposition by this method, a thickness of an organosilane prepolymer can be reduced to be 0.5μm or less (accurate control becomes possible), whereby sensitivity of this device can be enhanced.
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