| 摘要 |
The detector, having a resistivity of at least 109 Ohm/cm, incorporates an operational preamplifier (4) which is situated directly at the detector output with no possibility of separation from it. The detector incorporates an operational preamplifier (4) with an amplifier (6) a counter-reaction integration capacity (8) and a resistance (10). It has a device for exploiting a signal or a set of data representing the temporal evolution of a signal provided by the detector in response to the interaction of a gamma photon with the semiconductor material. It also has a means of producing data or a signal representative either the total charge detected or part of the total charge resulting from the collection of electrons. The detector is made from CdTe, CdTe : Cl, CdZnTe : Cl, CdTeSe : Cl, CzZnTe, HgI2, PbI2, GaAs or PbIn.
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