| 摘要 |
<p>PURPOSE:To improve the adhesive property between a gate electrode and gate insulating film and to suppress the cracking of the gate insulating film as well as to enhance the insulating characteristic of the gate insulating film by forming an Al film on a gate metallic film, then immersing the Al film in an etching liquid of a phosphoric acid system, thereby forming a mixture layer composed of alumina and the oxide of the gate metal on the surface of the gate electrode. CONSTITUTION:The Al film 10 is once formed on the gate metallic film 2. This Al film 10 is etched away by the etching of the phosphoric acid system, by which the mixture layer 11 consisting of the alumina and the oxide part of the gate metal is formed on the surface of the gate electrode G. This oxide mixture layer 11 is not only dense and adheres tightly to the gate metallic film 2 but also has the good adhesive property to the gate insulating film, such as SiN film, to be formed thereafter. Arbitrary metals among Ti, Cr, Ta, Co, Ni, Cu, Zn, Mo, and the alloys thereof are usable as the metal for forming the gate metallic film 2.</p> |
