发明名称 A MULTILAYER STRUCTURE AND ITS FABRICATION METHOD
摘要 A method of fabricating a multilayer structure, comprising:- (a) forming a first electrically conductive layering (2, 3); (b) providing a resist layer (4) with a via hole (4A), said via hole being located on said first electrically conductive layering; (c) forming a via lead (5) in said via hole by electrically plating a metal therein; (d) removing said resist layer (4); (e) forming an insulative layer (7-1) over said first electrically conductive layering (2, 3) and said via lead (5); (f) etching a surface part of said insulative layer (7-1) until a top part of said via lead (5) protrudes by a predetermined height from the etched surface of said insulative layer; and (g) forming a second electrically conductive layering (8; 8, 9) over said insulative layer (7-1) and over the protruding part of said via lead (5). A multi layer structure comprising:- a first electrically conductive pattern (3); an insulative layer (7-1) formed over said first electrically conductive pattern (3); an electrically conductive via lead (5) connected from said first pattern (3) through said insulative layer (7-1), a top of said via lead protruding from a surface of said insulative layer (7-1); and a second electrically conductive pattern (9) formed on said first insulative layer (7-1) and over said protruding top of said via lead (5). <IMAGE>
申请公布号 AU7358191(A) 申请公布日期 1992.01.30
申请号 AU19910073581 申请日期 1991.03.18
申请人 FUJITSU LIMITED 发明人 NAME NOT GIVEN
分类号 H01L21/48;H05K3/00;H05K3/10;H05K3/24;H05K3/46 主分类号 H01L21/48
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