| 摘要 |
<p>PURPOSE:To effectively cancel the defect of short-circuiting between layers by cutting a drain bus line, for which inter-layer short-circuiting takes place to a gate bus line, at two points with the short-circuited part between. CONSTITUTION:When a thin film transistor array substrate is made defective because of inter-layer short-circuiting at the cross part of slanting lines between a gate bus line 2' and a drain bus line 5', the drain bus line is cut off at two points shown by arrows B and B' in the figure according to the method of a laser beam, etc. A transparent conductive film for display area shown by an arrow C is cut off as well and further, the cross part (four points) between the drain bus line shown by slanting lines or the transparent conductive film for display area and a shunt conductor is irradiated with the laser beam. Then, inter-layer short-circuiting occurs in these areas, and the cut-off drain bus line as mentioned above is electrically connected with the other drain bus line. Thus, the defect of short-circuiting between layers to be generated between the gate bus line and the drain bus line can be effectively canceled.</p> |
