| 摘要 |
PURPOSE:To improve initializing and erasing characteristics by disposing a protective layer on the substrate side of a recording layer, forming an amorphous silicon layer in the part of said protective layer where the layer is adjacent to the recording layer, specifying the layer thickness thereof and using an org. resin to form the protective layer on the substrate side of the recording layer. CONSTITUTION:This recording medium has the substrate 11, the recording layer 13 on which information is recorded and erased by the phase change taking place between different crystal phases when a light beam is projected thereto, the 1st protective layer 12 which is formed between the substrate 11 and the recording layer 13, and the 2nd protective layer 14 which is formed on the recording layer 13. The part of the 1st protective layer 12 where said layer is adjacent to the recording layer 13 is formed of the amorphous silicon layer. The amorphous silicon layer is formed to the layer thickness larger than 100Angstrom and smaller than 2,800Angstrom . The 2nd protective layer 14 is formed of the org. resin. The amorphous silicon has the thermal diffusivity lower than the thermal diffusivity of SiO2 and the org. resin has the much smaller thermal diffusivity; therefore, the high capacity to retain the temp. of the recording layer is obtd. The slow cooling and solidifying of the recording layer at the time of the phase change are thus permitted and the initializing and erasing characteristics are improved. |
