发明名称 |
Small cell low contact resistance rugged power field effect devices and method of fabrication |
摘要 |
A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.
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申请公布号 |
US5119153(A) |
申请公布日期 |
1992.06.02 |
申请号 |
US19900588515 |
申请日期 |
1990.09.24 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KORMAN, CHARLES S.;SHENAI, KRISHNA |
分类号 |
H01L21/331;H01L21/332;H01L21/336;H01L29/739;H01L29/74;H01L29/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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