| 摘要 |
PURPOSE:To readily produce a tin(II) sulfide semiconductor film used as a high-performance solar cell, etc., in a short time. CONSTITUTION:This method for producing an SnS semiconductor film comprises heating a metallic Sn film in an H2S atmosphere a 100-230 deg.C for >=5min, thereby sulfurizing the surface of the metallic sulfide film and then further promoting the sulfurization of the metallic Sn film at a temperature within the range of 231-800 deg.C. The sulfide film produced by heating in the first stage acts as a shape retaining material to promote the sulfurization of the whole metallic Sn remaining in the interior of the film in heating in the second stage. Thereby, this tin(II) sulfide semiconductor film is excellent in adhesion with hardly any defects without breaking the film by melting and aggregating of the metallic Sn. |
