| 摘要 |
PROBLEM TO BE SOLVED: To increase electrostatic capacitance of a capacitor by a method, wherein a surface area of a storage electrode is increased by regulating magnitude of a storage electrode contact mask and using a selective growth technology. SOLUTION: After a first insulation film 5 is vapor-deposited in a lower insulation layer 3 of a semiconductor substrate 1, a storage electrode first contact mask 30 is formed and the first insulation film 5 is selectively grown to form a selective growing oxide film 7. After the storage electrode first contact mask 30 is removed, a first conductive layer 9 and a second insulation film 11 are formed, and a storage electrode second contact mask 40 smaller than the storage electrode first contact mask 30 is formed. After a contact hole 10 has been etched and formed using the storage electrode second contact mask 40, a second conductive layer 13 and a storage electrode mask 50 are formed. A first conductive layer pattern 9' and a second conductive layer pattern 13' are etched and formed using the storage electrode mask 50. A storage electrode 51 having an enlarged surface area is formed, and thereafter a dielectric film 17 and a plate electrode 19 are formed to obtain a capacitor securing electrostatic capacitance. |
