发明名称 MANUFACTURE OF PHOTOMASK AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To perform good pattern transfer irrespective of the status of patterns disposed, by having a second transparent region in which a linking part of its thicker part to its thinner part gets into a region interposed between a pair of first transparent regions off an imaginary straight line. SOLUTION: In a pattern repetition region 20, transparent regions 11A belonging to a first group and transparent regions 11B belonging to a second group are regularly disposed alternately in the longitudinal direction at equal spaces. Left ends of transparent regions 11A except for one transparent region 12 of the transparent regions 11A and those of transparent regions 11B are positioned on an imaginary straight line 13 that makes a right angle with them. The transparent region 12 comprises a thicker part 12a disposed in a region 21 with sparse patterns and a thinner part 12b disposed on the side of the pattern repetition region 20. A linking part 12c of the thicker part 12a to the thinner part 12b is caused to get somewhat in the pattern repetition region 20 off the imaginary straight line 13.
申请公布号 JPH1165082(A) 申请公布日期 1999.03.05
申请号 JP19970216766 申请日期 1997.08.11
申请人 FUJITSU LTD 发明人 TABATA YASUKO;ASAI SATORU;IKEDA TOSHIMI;MATSUMIYA MASATO
分类号 G03F1/30;G03F1/68;H01L21/027 主分类号 G03F1/30
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