| 摘要 |
<p>A two-layer bump (24) having an inner core (38) and an outer layer (40) encasing the inner core (38) are formed on an under bump metallization (28) of a semiconductor die (20). The bump (24) forms electrical contacts between the semiconductor die (20) and the substrate (22). The outer layer (40) can have a reflow temperature that is either less than or substantially equivalent to the reflow temperature of the inner core (38). The bumps (24) maintain a substantially uniform bump-height and standoff separation between the semiconductor die (20) and the substrate (22). An underfill material (26) fills the space of void surrounding the bumps (24) that are located between the semiconductor die (20) and the substrate (22).</p> |
