| 摘要 |
PROBLEM TO BE SOLVED: To reduce electrical signal losses by short-circuiting an N+ region and a P+ region formed adjacent to a channel doping region right under a gate with a second electrode, isolating them from other elements by a filled shield, and not connecting the second electrode to a fixed potential. SOLUTION: An N+ region 12 and a P+ region 13 are formed adjacent to a channel doping region right under a gate. Further, a filled shield 14 for isolating the regions 12 and 13 from other elements such as a MOSFET and gate capacitance, is formed of polysilicon. According to this constitution, the regions 12 and 13 are insulated from each other by SiO2 and thus parasitic resistance between a capacitive element and a ground increases remarkably. Hence, a parasitic capacitance can be made extremely small. Therefore, electrical signal losses can be reduced.
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