| 摘要 |
PROBLEM TO BE SOLVED: To stably manufacture a good thin film semiconductor device by cleaning a substrate after forming a silicon oxide film thereon, depositing an amorphous semiconductor film using a high-order silane as a kind of raw material gases, and crystallizing the amorphous film to form a crystalline semiconductor film. SOLUTION: After depositing a silicon oxide film as a base protective film 102 on a substrate 101, the substrate 101 is cleaned with isopropyl alcohol and pure water with the ultrasonic irradiation to remove a surface layer of 10 nm from the base protective film 102, an amorphous semiconductor film is deposited using a high-order silane as a kind of raw material gases, this film is heat treated to crystallize and patterned to form islands 103 of the semiconductor film, the islands 103 of the semiconductor film are covered with a silicon oxide film 104, gate electrodes 105 are formed, an impurity ion 106 is implanted, and a layer insulation film 109 is deposited to form a wiring 110.
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