发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING ITS CONTACT
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device at a relatively low cost, and to provide a method for forming the contact of the device. SOLUTION: The semiconductor device has a lower metal layer, a lower dielectric layer formed on the metal layer, and an upper metallic layer formed on the dielectric layer. The device also has an upper dielectric layer, formed on the upper metallic layer and a contact section which is formed in the form of a cavity through the upper dielectric layer, upper metal layer, and lower dielectric layer for making access to the solder pad section of the lower metal layer. A dielectric lining layer is provided perpendicularly to the surface of the lower metal layer so as to cover the inner peripheral surface of the closed cavity. The lining layer is accessible to the solder pad section of the lower metal layer and separates the lower and upper metal layers from each other. An electric contact fills the cavity and makes the lower metal layer electrically connectable to the outside.</p>
申请公布号 JP2001313306(A) 申请公布日期 2001.11.09
申请号 JP20000279825 申请日期 2000.09.14
申请人 CTS COMPUTER TECHNOLOGY SYSTEM CORP 发明人 CHIN MEITO
分类号 H01L21/60;H01L21/768;H01L23/522;H01L23/60;H05K3/40;H05K3/46;(IPC1-7):H01L21/60 主分类号 H01L21/60
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