| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor, whose resistance to fatigue is improved, when compared to a ferroelectric capacitor which is manufactured by employing a low-temperature deposition technique for a platinum lower electrode of a conventional technique, and reduce stress and raise its thermal stability as the whole of a ferroelectric capacitor stack, when compared to a ferroelectric capacitor stack of the conventional technique. SOLUTION: This manufacturing method of a lower electrode, which is suitable for use in a ferroelectric capacitor on a substrate comprises a process for forming an adhesion layer on the substrate and a process for forming a platinum thin-film layer deposited on the adhesion layer at 300 to 800 deg.C. |
