GaP EPITAXIAL WAFER AND GaP LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a GaP epitaxial wafer which can provide higher luminance and a GaP light emitting element using the same wafer.

SOLUTION: In this GaP epitaxial wafer 3, an n-type GaP buffer layer 11 is formed on the plane ä111}B of an n-type GaP single crystal substrate 10. The number of comb type crystal defects which are observed at the n-type GaP buffer layer 11 when the ä01-1} cleaved surface is selectively etched and extending crossing with the growth interface of the n-type GaP buffer layer 11 is 30 or less per 100 μm at the growth interface. The GaP light emitting element 1 manufactured using this GaP epitaxial wafer 3 assures higher luminance.

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