| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for controlling a conductivity of Ga<SB>2</SB>O<SB>3</SB>series monocrystal, capable of effectively controlling conductive properties of β-Ga<SB>2</SB>O<SB>3</SB>series monocrystal. <P>SOLUTION: This light emitting element comprises an n-type β-Ga<SB>2</SB>O<SB>3</SB>substrate, and further comprises an n-type β-AlGaO<SB>3</SB>clad layer, an active layer, a p-type β-AlGaO<SB>3</SB>clad layer, and a p-type β-Ga<SB>2</SB>O<SB>3</SB>contact layer, on the n-type β-Ga<SB>2</SB>O<SB>3</SB>substrate. An Si density is varied to 1×10<SP>-5</SP>to 1 mol%, resulting in controlling a resistivity in a range of 2.0×10<SP>-3</SP>to 8×10<SP>2</SP>Ωcm and a carrier density in a range of 5.5×10<SP>15</SP>to 2.0×10<SP>19</SP>/cm<SP>3</SP>. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
