| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device forming a contact hole, a via-hole and a via-contact hole with an excellent contact property, and a method of forming the semiconductor device. <P>SOLUTION: The semiconductor device and the manufacturing method thereof are technically characterized by comprising: an insulating substrate; a thin film transistor formed by including a semiconductor layer 103, a gate insulating film 104, a gate electrode 105 and an interlayer insulating film 106 on the substrate; and a contact hole 114 which penetrates the gate insulating film 104 and the interlayer insulating film 106 to expose a front surface of the semiconductor layer 103 and has multiplex profiles, an upper part thereof having a wet etching profile, and parts below the upper part thereof having any one or more of the wet etching profile or a dry etching profile. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
