HIGH-PURITY Ru ALLOY TARGET, PROCESS FOR PRODUCING THE SAME AND SPUTTERED FILM

摘要

[PROBLEMS] To provide a sputtering target that not only minimizes harmful substances but also miniaturizes crystal grains to the utmost possible so as to uniformize the film thickness distribution at film formation and that would not deteriorate the adherence to Si substrate, being suitable for use in the formation of capacitor electrode material of semiconductor memory. Further to provide a process for producing the same and a high-purity Ru alloy sputtered film obtained by sputtering the Ru alloy target. [MEANS FOR SOLVING PROBLEMS] There is provided a high-purity Ru alloy target characterized by being composed of 15 to 200 wtppm of non-Ru platinum group element and the balance Ru and unavoidable impurities. Further, there is provided a process for producing a high-purity Ru alloy target composed of 15 to 200 wtppm of non-Ru platinum group element and the balance Ru and unavoidable impurities, characterized by first mixing 99.9% or higher purity Ru powder and non-Ru platinum group element powder together, press molding the mixture into a molded item, melting the molded item by electron beams into an ingot, and forging the ingot into a target.