发明名称 Light-emitting apparatus and method of manufacturing the same
摘要 A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
申请公布号 US7301279(B2) 申请公布日期 2007.11.27
申请号 US20020098617 申请日期 2002.03.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI
分类号 H01L51/52;H01L27/32 主分类号 H01L51/52
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