发明名称 |
Light-emitting apparatus and method of manufacturing the same |
摘要 |
A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
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申请公布号 |
US7301279(B2) |
申请公布日期 |
2007.11.27 |
申请号 |
US20020098617 |
申请日期 |
2002.03.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI |
分类号 |
H01L51/52;H01L27/32 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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