| 摘要 |
<p>Disclosed is a composition for electroless plating which enables to provide a metal wiring such as a copper wiring formed on a semiconductor substrate with a flat metal protection film. Also disclosed is a method for forming a metal protection film. Specifically disclosed is a composition for electroless plating which enables to form a flat metal protection film by suppressing corrosion or dissolution of a copper wiring. This composition for electroless plating is particularly useful for formation of a multilayer wiring. Also specifically disclosed is a method for forming a metal protection film by using such a composition for electroless plating. More specifically disclosed is a composition for electroless plating, which contains a plating metal ion, a reducing agent, a compound which is capable of forming a complex with the plating metal ion, and a compound represented by the following general formula (1). (1) (In the formula, R<SUP>1</SUP> and R<SUP>2</SUP> independently represent an alkyl group having 1-3 carbon atoms; and R<SUP>3</SUP> represents a divalent aliphatic hydrocarbon group having 1-6 carbon atoms which may contain an oxygen atom.) Also more specifically disclosed is a method for forming a metal protection film by using such a composition.</p> |
