发明名称 Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film
摘要 A gas barrier thin film having a substrate, an anchoring layer, and an inorganic oxide layer, the anchoring layer including a silicon-containing organic-inorganic composite copolymer comprising a repeating unit of the formula —(SiO)n—, a repeating unit of the formula —(SiR1R2—NR3)m—, and at least one or a combination of repeating units of the formulas ; wherein at least one of R1, R2, and R3 is independently hydrogen, R1, R2, and R3 are each independently C1-C5 alkyl, C2-C5 alkenyl, C2-C5 alkynyl, C1-C5 alkoxyl, or C6-C15 aryl, R4, R5, R6, and R7 are each independently hydrogen, C1-C3 alkyl, C1-C3 alkoxyl, C3-C10 cycloalkyl, or C6-C15 aryl, R4 and R5 are not simultaneously hydrogen, R6 and R7 are not simultaneously hydrogen, n+m+r=1, 0<n<1, 0<m<1, and 0<r<1, ‘n’, ‘m’, and ‘r’ are each a molar ratio, ‘r’ is p, q, or p+q, and a degree of polymerization is about 1,000 to about 1,000,000.
申请公布号 US9368746(B2) 申请公布日期 2016.06.14
申请号 US200912505245 申请日期 2009.07.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Kwang-hee;Park Jong-jin;Bulliard Xavier;Choi Yun-hyuk
分类号 C09D183/08;H01L31/048;H01L51/52;C09D183/04;C09D183/16;H01L31/0392;H01L51/00;H01L51/44;H01L21/312 主分类号 C09D183/08
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A gas barrier film comprising: a substrate; an anchoring layer disposed on a surface of the substrate; and an inorganic oxide layer disposed directly on a surface of the anchoring layer opposite the substrate, wherein the inorganic oxide layer comprises Al2O3, MgO, ZnO, or a mixture thereof; wherein the anchoring layer comprises a coating of a silicon-containing organic-inorganic composite copolymer as a thermoset of a mixture of a polysilazane and a polysiloxane-based polymer, wherein the copolymer comprises a repeating unit represented by Formula 1 below; a repeating unit represented by Formula 2 below; and at least one repeating unit selected from the group consisting of repeating units represented by Formulas 3 and 4 below, and a combination thereof: —(SiO)n—  Formula 1—(SiR1R2—NR3)m—  Formula 2wherein at least one of the group consisting of R1, R2, and R3 is independently hydrogen, and the remaining R1, R2, and R3 are each independently a C1-C5 alkyl group, a C2-C5 alkenyl group, a C2-C5 alkynyl group, a C1-C5 alkoxyl group, or a C6-C15 aryl group, R4, R5, R6, and R7 are each independently hydrogen, a C1-C3 alkyl group, a C1-C3 alkoxyl group, a C3-C10 cycloalkyl group or a C6-C15 aryl group, R4 and R5 are not simultaneously hydrogen, R6 and R7 are not simultaneously hydrogen, n+m+r=1, 0<n<1, 0<m<1, and 0<r<1, ‘n’, ‘m’, ‘p’, ‘q’, and ‘r’ are each a mole fraction of respective repeating units, ‘r’ is p, q, or p+q, and a degree of polymerization is in the range of about 1,000 to about 1,000,000, wherein the at least one repeating unit selected from the group consisting of repeating units represented by Formulas 3, 4, and a combination thereof of the silicon-containing organic-inorganic composite copolymer is randomly cross-linked with the repeating unit represented by Formula 2 of the silicon-containing organic-inorganic composite copolymer, wherein the crosslink results from removal of a hydroxyl group at an end group of the polysiloxane-based polymer, wherein a mixing weight ratio of the polysilazane and the polysiloxane-based polymer of the mixture is in a range of about 9:1 to about 1:2, and wherein a light transmittance of the gas barrier film is equal to or greater than about 70% in a visible light wavelength region.
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