发明名称 METHOD FOR REMOVING MULTILAYER RESIST AND PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for removing a multilayer resist capable of improving productivity, and a plasma processing device.SOLUTION: In a method for removing a multilayer resist according to an embodiment, a multilayer resist including a first film provided on a substrate and containing a first organic material, a second film provided on the first film and containing an inorganic material, and a third film provided on the second film and containing a second organic material is removed. The method for removing a multilayer resist includes the steps of: removing the first film and the third film by first neutral active species generated using plasma; and removing the second film by second neutral active species generated using the plasma or a process liquid. In the steps of removing the first film and the third film, a penetration part penetrating through the second film is formed such that temperature of the multilayer resist is higher than temperature of the pre-bake temperature of the first film.SELECTED DRAWING: Figure 1
申请公布号 JP2016127119(A) 申请公布日期 2016.07.11
申请号 JP20140266191 申请日期 2014.12.26
申请人 SHIBAURA MECHATRONICS CORP 发明人 DEMURA KENSUKE;MATSUSHIMA DAISUKE;NAKAMURA SATOSHI;SASAHIRA KONOSUKE
分类号 H01L21/3065;H01L21/027;H05H1/46;H05H3/02 主分类号 H01L21/3065
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