发明名称 |
METHOD FOR REMOVING MULTILAYER RESIST AND PLASMA PROCESSING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a multilayer resist capable of improving productivity, and a plasma processing device.SOLUTION: In a method for removing a multilayer resist according to an embodiment, a multilayer resist including a first film provided on a substrate and containing a first organic material, a second film provided on the first film and containing an inorganic material, and a third film provided on the second film and containing a second organic material is removed. The method for removing a multilayer resist includes the steps of: removing the first film and the third film by first neutral active species generated using plasma; and removing the second film by second neutral active species generated using the plasma or a process liquid. In the steps of removing the first film and the third film, a penetration part penetrating through the second film is formed such that temperature of the multilayer resist is higher than temperature of the pre-bake temperature of the first film.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016127119(A) |
申请公布日期 |
2016.07.11 |
申请号 |
JP20140266191 |
申请日期 |
2014.12.26 |
申请人 |
SHIBAURA MECHATRONICS CORP |
发明人 |
DEMURA KENSUKE;MATSUSHIMA DAISUKE;NAKAMURA SATOSHI;SASAHIRA KONOSUKE |
分类号 |
H01L21/3065;H01L21/027;H05H1/46;H05H3/02 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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