| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which eliminates a height difference due to variation in heights of an internal terminal part electrically connected to a semiconductor element to prevent tilt of the semiconductor element to be mounted and avoid conduction failure resulting from poor connection by bonding and the like; and provide a semiconductor device manufacturing method which allows omission of a process of forming an opening for exposing only an external terminal part.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming on a metal plate 10, a plating layer 11 to be an internal terminal 1; forming partially on the plating layer 11, a plating layer 14 to be an external terminal 3; forming a resin 20 layer where a surface of the plating layer 14 to be the external terminal 3 is exposed by using a semiconductor device substrate where a height of the surface of the plating layer 14 to be the external terminal 3 from a surface of the metal plate 10 is higher in comparison with other plating layers; removing the metal plate 10 to make a wiring member 30 in which the formed plating layer is held by the resin 20 layer; and mounting a semiconductor element 40 on the made wiring member 30.SELECTED DRAWING: Figure 1 |
