METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

A method and apparatus for producing continuously and at a high speed a high quality silicon carbide single crystal under a stable condition. The method comprises passing a vaporized gas from a silicon starting material through a heated carbon material, causing the gas to arrive at a seed crystal substrate and growing the silicon carbide single crystal on the substrate. The apparatus comprises a portion for filling a silicon starting material (5) at a lower part thereof, a seed crystal substrate (2) at the top thereof, and carbon materials (31 and 32) disposed at an intermediate part between the portion for filling the silicon starting material (5) and the seed crystal substrate (2) in such a manner that a vaporized gas from the silicon starting material (5) can pass through them. Porous carbon structures, carbon plates having a large number of through-holes, packed carbon granular bodies, etc. can be used as the carbon material.