Handler wafer removal by use of sacrificial inert layer

摘要

The present invention relates generally to semiconductor structures and methods of manufacture and, more particularly, to the temporary bonding of a semiconductor wafer to handler wafer during processing. The semiconductor wafer may be temporarily bonded to the handler wafer by forming a sacrificial layer on a surface of a handler wafer, forming a first dielectric layer on a surface of the sacrificial layer, forming a second dielectric layer on a surface of a semiconductor wafer, and directly bonding the first dielectric layer and the second dielectric layer to form a bonding layer. After the semiconductor wafer is processed, it may be removed from the handler wafer along with the bonding layer by degrading the sacrificial layer with infrared radiation transmitted through the handler wafer.

主权项

1. A method comprising:
forming a sacrificial layer on a surface of the handler wafer, wherein the sacrificial layer comprises an inert material, and the sacrificial layer is formed to be degradable by infrared radiation; forming a first dielectric layer on a surface of the sacrificial layer; forming a second dielectric layer on a surface of a semiconductor wafer; directly bonding the first dielectric layer and the second dielectric layer to form a bonding layer, the bonding layer joining the semiconductor wafer and the handler wafer; and separating the semiconductor wafer with the bonding layer from the handler wafer by degrading the sacrificial layer with infrared radiation, the infrared radiation passing through the handler wafer to degrade the sacrificial layer and thereby release the semiconductor wafer with the bonding layer from the handler wafer.