MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transistor with excellent electric characteristics in the transistor using an oxide semiconductor, and a manufacturing method for the same.SOLUTION: A transistor includes: an oxide semiconductor film formed on a base insulation film; a gate electrode overlapping with the oxide semiconductor film via a gate insulation film; and a pair of electrodes in contact with the oxide semiconductor film and functioning as a source electrode and a drain electrode. The base insulation film includes: a first oxide insulation film which is partially in contact with the oxide semiconductor film; and a second oxide insulation film provided around the first oxide insulation film. An end of the oxide semiconductor film intersecting with a channel width direction of the transistor is located on the second oxide insulation film.SELECTED DRAWING: Figure 1