发明名称 |
Method of singulating LED wafer substrates into dice with LED device with Bragg reflector |
摘要 |
A method of dicing semiconductor devices from a substrate includes forming a Bragg reflector over a bottom side of the substrate, where the bottom side is opposite of a top side, generating a pattern of defects in the substrate with a laser beam from the bottom side of the substrate, and applying pressure to the substrate to dice the substrate along the pattern of defects. The Bragg reflector includes a first layer of dielectric material having a first index of refraction and a second dielectric material having a second index of refraction different from the first index of refraction. |
申请公布号 |
US9419185(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201514605200 |
申请日期 |
2015.01.26 |
申请人 |
GLO AB |
发明人 |
Herner Scott Brad |
分类号 |
H01L33/00;H01L33/46;H01L33/18;H01L33/32;H01L33/08 |
主分类号 |
H01L33/00 |
代理机构 |
The Marbury Law Group PLLC |
代理人 |
The Marbury Law Group PLLC |
主权项 |
1. A method of dicing semiconductor devices from a substrate, comprising:
forming a Bragg reflector over a bottom side of the substrate, wherein the bottom side is opposite of a top side and the Bragg reflector comprises a first layer of dielectric material having a first index of refraction and a second dielectric material having a second index of refraction different from the first index of refraction; forming a plurality of LED layers over the top side of the substrate, wherein the semiconductor devices comprise LED dice; generating a pattern of defects in the substrate with a laser beam from the bottom side of the substrate; and applying pressure to the substrate to dice the substrate along the pattern of defects. |
地址 |
Lund SE |