发明名称 Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
摘要 A method of dicing semiconductor devices from a substrate includes forming a Bragg reflector over a bottom side of the substrate, where the bottom side is opposite of a top side, generating a pattern of defects in the substrate with a laser beam from the bottom side of the substrate, and applying pressure to the substrate to dice the substrate along the pattern of defects. The Bragg reflector includes a first layer of dielectric material having a first index of refraction and a second dielectric material having a second index of refraction different from the first index of refraction.
申请公布号 US9419185(B2) 申请公布日期 2016.08.16
申请号 US201514605200 申请日期 2015.01.26
申请人 GLO AB 发明人 Herner Scott Brad
分类号 H01L33/00;H01L33/46;H01L33/18;H01L33/32;H01L33/08 主分类号 H01L33/00
代理机构 The Marbury Law Group PLLC 代理人 The Marbury Law Group PLLC
主权项 1. A method of dicing semiconductor devices from a substrate, comprising: forming a Bragg reflector over a bottom side of the substrate, wherein the bottom side is opposite of a top side and the Bragg reflector comprises a first layer of dielectric material having a first index of refraction and a second dielectric material having a second index of refraction different from the first index of refraction; forming a plurality of LED layers over the top side of the substrate, wherein the semiconductor devices comprise LED dice; generating a pattern of defects in the substrate with a laser beam from the bottom side of the substrate; and applying pressure to the substrate to dice the substrate along the pattern of defects.
地址 Lund SE