Solid-state imaging device, manufacturing method and designing method thereof, and electronic device

摘要

A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.

主权项

1. A solid-state imaging device comprising:
a semiconductor substrate; a plurality of photodiodes on the semiconductor substrate having at least a first photodiode associated with a first pixel and a second photodiode associated with a second pixel; multilayer wiring on the semiconductor substrate; a first insulating film on the semiconductor substrate covering the multilayer wiring and extending over the first and second pixel, the first insulating film having a first refractive index; a second insulating film having a second refractive index higher than the first refractive index and disposed on the first insulating film and extending over the first and second pixels; and a third insulating film having a third refractive index higher than the second refractive index and disposed on the second insulating film and extending over the first and second pixels, wherein,
the second insulating film has different thicknesses for the first pixel and the second pixel, wherein the thickness of the second insulating film for the first pixel differs from the thickness of the second insulating film for the second pixel by a difference of a quarter of wavelength of the first pixel and a quarter of wavelength of the second pixel, andthe third insulating film is configured to planarize the thickness variations of the second insulating film.