发明名称 |
Reusable substrate bases, semiconductor devices using such reusable substrate bases, and methods for making the reusable substrate bases |
摘要 |
Reusable substrate bases for producing multilayer semiconductor devices are provided, as well as free-standing semiconductor devices and reusable substrate bases produced for the multilayer semiconductor devices. The reusable substrate bases comprise a Si-based substrate, a transition lattice overlayed thereon, and a sacrificial ZnO-based layer overlayed on the transition lattice. The transition lattice comprises alternating transition layers of aluminum nitride (AlN) and GaN or Al-doped GaN. The multilayer semiconductor devices comprise the aforesaid reusable substrate bases and a semiconductor stack which comprises a pair of p-n junction forming layers. Methods for producing the multilayer semiconductor devices, the reusable substrate base, as well as free standing semiconductor devices detached from the reusable substrate bases, are also provided. |
申请公布号 |
US9419081(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201414465016 |
申请日期 |
2014.08.21 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
Devaramani Basavaraja Sangappa;Raghurama Raju Addepalle;Stokely John |
分类号 |
H01L33/00;H01L29/20;H01L21/02;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
Ingrassia, Fisher & Lorenz, P.C. |
代理人 |
Ingrassia, Fisher & Lorenz, P.C. |
主权项 |
1. A reusable substrate base useful for production of semiconductor devices comprising:
a Si-based substrate; a transition lattice overlaying said Si-based substrate and comprising two or more alternating transition layers, wherein the alternating transition layers comprise a first transition layer that comprises AlN and that overlays said Si-based substrate, and a second transition layer that comprises either GaN or GaN doped with Al, and that overlays said first transition layer comprising AlN; a sacrificial ZnO-based layer that overlays said transition lattice; and a catalyst-bearing layer that overlays the transition lattice and that is overlayed by said sacrificial ZnO-based layer. |
地址 |
Morris Plains NJ US |