发明名称 Solid-state image pickup device
摘要 A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
申请公布号 US9419030(B2) 申请公布日期 2016.08.16
申请号 US201514856354 申请日期 2015.09.16
申请人 CANON KABUSHIKI KAISHA 发明人 Shimotsusa Mineo
分类号 H01L27/00;H01L27/146;H01L31/09 主分类号 H01L27/00
代理机构 Canon USA, Inc. IP Division 代理人 Canon USA, Inc. IP Division
主权项 1. A device comprising: a first substrate provided with a first transistor on a primary face of the first substrate; a first wiring structure which is disposed on the first substrate, the first wiring structure having a first conductive portion, a first wiring and a first insulating film, the first conductive portion containing a conductive material and being connected to a first circuit including the first transistor via the first wiring; a second substrate provided with a second transistor on a primary face of the second substrate; and a second wiring structure which is disposed on the second substrate, the second wiring structure having a second conductive portion, and a second wiring and a second insulating film, the second conductive portion containing a conductive material and being connected to a second circuit including the second transistor via the second wiring, wherein the first wiring structure and the second wiring structure are disposed between the first substrate and the second substrate, and the first wiring structure and the second wiring structure are bonded to each other at a bonding plane so that the first conductive portion and the second conductive portion are connected to each other, wherein the first insulating film has a groove in which the first conductive portion is disposed, and the first insulation film has, on a side of the second wiring structure, a first face extend along the primary face of the first substrate from the groove of the first insulating film, and the second insulating film has a groove in which the second conductive portion is disposed, and the second insulating film has, on a side of the first wiring structure, a second face extend along the primary face of the second substrate from the groove of the second insulating film, and the device further comprising at least one of: a first film which has a portion positioned, in a direction perpendicular to the primary face of the first substrate, between the first face of the first insulating film and the second conductive portion, so that the portion of the first film prevents a diffusion of the conductive material of the second conductive portion; and a second film which has a portion positioned, in a direction perpendicular to the primary face of the second substrate, between the second face of the second insulating film and the first conductive portion, so that the portion of the second film prevents a diffusion of the conductive material of the first conductive portion, wherein at least one of the first film and the second film forms the bonding plane.
地址 Tokyo JP