MIM capacitors with improved reliability

摘要

A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

主权项

1. A device comprising:
a bottom electrode comprising:
a metal layer; anda metal nitride layer over the metal layer; a metal oxynitride layer over the bottom electrode, wherein the metal oxynitride layer and the bottom electrode comprise same metals, wherein a first atom ratio of metal-to-nitrogen in the metal nitride layer is substantially equal to a second metal-to-nitrogen in the metal oxynitride layer; an insulating layer over the metal oxynitride layer; and a top electrode over the insulating layer.