| 发明名称 | Storage controllers, methods of operating the same and solid state disks including the same | ||
| 摘要 | A storage controller includes a first on-die termination (ODT) circuit, a second ODT circuit and an ODT control circuit. The first ODT circuit provides a first termination resistance with a strobe signal line transferring a data strobe signal. The second ODT circuit provides a second termination resistance with at least one data line transferring data. The ODT control circuit individually controls activation and deactivation of the first ODT circuit and the second ODT circuit. | ||
| 申请公布号 | US9432018(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201514806686 | 申请日期 | 2015.07.23 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Kwang-Soo;Kim Su-Jin;Cho Jung-Hee |
| 分类号 | H03K19/003;H03K19/00 | 主分类号 | H03K19/003 |
| 代理机构 | Myers Bigel & Sibley, P.A. | 代理人 | Myers Bigel & Sibley, P.A. |
| 主权项 | 1. A storage controller comprising: a first on-die termination (ODT) circuit that is configured to provide a first termination resistance with a strobe signal line that is configured to transfer a data strobe signal; a second ODT circuit that is configured to provide a second termination resistance with at least one data line that transfers data; and an ODT control circuit that is configured to individually control activation and deactivation of the first ODT circuit and the second ODT circuit, wherein the ODT control circuit activates the first ODT circuit and deactivates the second ODT circuit during a reception operation in which the storage controller receives the data from a nonvolatile memory device. | ||
| 地址 | KR | ||