发明名称 Sol-gel precursors and methods for making lead-based perovskite films
摘要 A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications.
申请公布号 US9431598(B2) 申请公布日期 2016.08.30
申请号 US200712513308 申请日期 2007.11.06
申请人 Drexel University 发明人 Shih Wei-Heng;Shih Wan Y.;Shen Zuyan;Li Huidong;Gao Xiaotong
分类号 H01L41/00;H01L41/318;H01L41/187;H01L41/09 主分类号 H01L41/00
代理机构 Mendelsohn Dunleavy, P.C. 代理人 Mendelsohn Dunleavy, P.C.
主权项 1. A method for producing a lead-containing perovskite film comprising the steps of: (a) dissolving lead acetate and other film components in a suitable solvent to provide a precursor solution, (b) depositing the precursor on a substrate; (c) pyrolyzing the deposited precursor; (d) annealing the pyrolyzed precursor; and (e) repeating steps (b)-(d) to obtain a desired film thickness, wherein sufficient lead is employed in step (a) to provide a 25-75 mole percent stoichiometric excess of lead, relative to a stoichiometric amount of lead required to react with said other film components for form said perovskite film, wherein the lead acetate comprises lead acetate anhydrous, and wherein the lead acetate anhydrous is aged in air for 19 to 24 days.
地址 Philadelphia PA US