| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer. | ||
| 申请公布号 | US9431547(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201615049554 | 申请日期 | 2016.02.22 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Yamazaki Shunpei;Sakakura Masayuki;Suzawa Hideomi |
| 分类号 | H01L29/10;H01L29/12;H01L29/786;H01L29/04 | 主分类号 | H01L29/10 |
| 代理机构 | Robinson Intellectual Property Law Office | 代理人 | Robinson Intellectual Property Law Office ;Robinson Eric J. |
| 主权项 | 1. A semiconductor device comprising: a first oxide semiconductor layer over an insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; and a third oxide semiconductor layer over and in contact with the insulating layer, the first oxide semiconductor layer, and the second oxide semiconductor layer, wherein the third oxide semiconductor layer comprises a first layer and a second layer over the first layer, and wherein crystallinity in the first layer is lower than crystallinity in the second layer. | ||
| 地址 | Kanagawa-ken JP | ||