Three dimensional device integration method and integrated device

摘要

A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.

主权项

1. A bonding method comprising:
depositing a first layer on a first semiconductor element; polishing the first layer; depositing a second layer on the polished first layer of the first semiconductor element; polishing the second layer; providing a second semiconductor element having a third layer provided thereon; bringing into direct contact the polished second layer of the first semiconductor element with the third layer of the second semiconductor element; and directly bonding the second polished layer of the first semiconductor element to the third layer of the second semiconductor element.