| 发明名称 | Semiconductor device including gate drivers around a periphery thereof | ||
| 摘要 | A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells, and a metallic layer electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers positioned along a periphery of the semiconductor die and electrically coupled to gates of the plurality of LDMOS cells through the metallic layer. | ||
| 申请公布号 | US9443839(B2) | 申请公布日期 | 2016.09.13 |
| 申请号 | US201314091718 | 申请日期 | 2013.11.27 |
| 申请人 | Enpirion, Inc. | 发明人 | Lotfi Ashraf W.;Demski Jeffrey;Feygenson Anatoly;Lopata Douglas Dean;Norton Jay;Weld John D. |
| 分类号 | H01L29/417;H01L21/8238;H01L27/02;H01L23/522;H01L29/66;H01L27/092;H01L27/088;H01L21/8234;H01L25/00;H01L27/06;H01L23/482;H01L23/36;H01L23/495;H01L29/78;H01L23/31;H01L23/64;H01L23/00;H01L29/45;H01L29/49;H01L29/08;H01L29/10;H01L21/768;H01L21/285 | 主分类号 | H01L29/417 |
| 代理机构 | Fletcher Yoder, P.C. | 代理人 | Fletcher Yoder, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (LDMOS) cells forming an LDMOS device; a metallic layer electrically coupled to said plurality of LDMOS cells; and a plurality of gate drivers positioned along a periphery on said semiconductor die and electrically coupled to gates of said plurality of LDMOS cells through said metallic layer. | ||
| 地址 | Hampton NJ US | ||