Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si_1-xGe_xmaterial in the presence of a CMP composition comprising a specific organic compound

摘要

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1≦x<1 in the presence of a chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, (C) at least one type of an organic compound which comprises at least {k} moieties (Z), but excluding salts whose anions are inorganic and whose only organic cation is [NR11R12R13R14]+, wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (—OH), alkoxy (—OR1), heterocyclic alkoxy (—OR1 as part of a heterocyclic structure), carboxylic acid (—COOH), carboxylate (—COOR2), amino (—NR3R4), heterocyclic amino (—NR3R4 as part of a heterocyclic structure), imino (═N—R5 or —N═R6), heterocyclic imino (═N—R5 or —N═R6 as part of a heterocyclic structure), phosphonate (—P(=0)(OR7)(OR8)), phosphate (-0-P(=0)(OR9)(OR10)), phosphonic acid (—P(=0)(OH)2), phosphoric acid (-0-P(=0)(OH)2) moiety, or their protonated or deprotonated forms, R1, R2, R7, R9 is—independently from each other—alkyl, aryl, alkylaryl, or arylalkyl, R3, R4, R5, R8, R10 is—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkylene, or arylalkylene, R11, R12, R13 is—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, and R11, R12, R13 does not comprise any moiety (Z), R14 is alkyl, aryl, alkylaryl, or arylalkyl, and R14 does not comprise any moiety (Z), and (D) an aqueous medium.

主权项

1. A process for manufacturing a semiconductor device comprising chemically and mechanically polishing at least one of an elemental germanium and Si1-xGex material, wherein 0.1≦x<1, in the presence of a chemical mechanical polishing (CMP) composition comprising:
(A) at most 10 wt. % of inorganic particles, organic particles, or a mixture or composite thereof; (B) an oxidizing agent; (C) an organic compound which comprises at least {k} moieties (Z), hut excluding salts whose anions are inorganic and whose only organic cation is [NR11R12R13R14]+, wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (—OH), alkoxy (OR1), heterocyclic alkoxy (—OR1 as part of a heterocyclic structure), carboxylic acid (—COOH), carboxylate (—COOR2), amino (—NR3R4), heterocyclic amino (—NR3R4 as part of a heterocyclic structure), imino (═N—R5 or —N═R6), heterocyclic imino (═N—R5 or —N═R6 as part of a heterocyclic structure), phosphonate (—P(═O)(OR7)(OR8)), phosphate (—O—P(═O)(OR9)(OR10)), phosphonic acid (—P(═O)(OH)2), phosphoric acid (—O—P(═O)(OH)2) moiety, or their protonated or deprotonated forms thereof, R1, R2, R7, R9 are each independently alkyl, aryl, alkylaryl, or arylalkyl, R3, R4, R5, R8, R10 are each independently H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkylene, or arylalkylene, R11, R12, R13 are each independently H, alkyl, aryl, alkylaryl, or arylalkyl, and R11, R12, R13 does not comprise any moiety (Z), and R14 is alkyl, aryl, alkylaryl, or arylalkyl, and R14 does not comprise any moiety (Z); and (D) an aqueous medium, wherein a pH value of the CMP composition is from 2.5 to 5.5.