Ion implantation system and process for ultrasensitive determination of target isotopes

摘要

A system and process are disclosed for ultrasensitive determination of target isotopes of analytical interest in a sample. Target isotopes may be implanted in an implant area on a high-purity substrate to pre-concentrate the target isotopes free of contaminants. A known quantity of a tracer isotope may also be implanted. Target isotopes and tracer isotopes may be determined in a mass spectrometer. The present invention provides ultrasensitive determination of target isotopes in the sample.

主权项

1. A method for ultrasensitive determination of a target isotope in a sample, the method comprising the steps of:
mass-selecting ions of the target isotope in a mass-selective spectrometer introduced from a high-temperature plasma source to isolate the target isotope from sample matrix components and/or contaminants present in the sample; implanting the isolated target isotope onto the surface of a high-purity substrate in an implant area of a selected size to pre-concentrate the target isotope thereon free of sample matrix components and/or contaminants; implanting a known quantity of a tracer isotope in the implant area on the substrate to obtain a ratio of the target isotope and the tracer isotope in the solid state that defines an isotope dilution standard thereon; ablating the implant area containing the target isotope and the tracer isotope; and determining the concentration of the target isotope at a detection limit of at least about 108 atoms per cm2 or lower.