| 摘要 |
1,214,458. Photo-resist process. NATIONAL CASH REGISTER CO. Jan.20 1969 [Feb.12, 1968] No.3076/69. Heading G2C. [Also in Divisions B3 and H1] A pattern of metallic, dielectric or semiconductive material (e.g. a microcircuit or integrated circuit) is formed on a substrate by (1) coating the substrate with, in order, a layer of the material and a photo-chromic coating, (2) exposing the photo-chromic material to form a pattern of differential solubility, (3) removing the more soluble areas of the coating with a solvent, (4) removing the material by sputter-etching in the areas not protected by the photo-chromic coating, and (5) removing the remaining photo-chromic coating. The photo-chromic coating may be imagewise exposed to UV, or uniformly exposed to UV. and imagewise exposed using a laser of 6328A. Preferably the substrate is of glass or a glazed ceramic, the material is a 1000A layer of Pb, Au, Cd S or SiO or a layer of Ta or Cr overcoated with Au, and the photo-chromic coating comprises a spiropyran. |
