| 摘要 |
PURPOSE:To process a substrate minutely, cleanly and precisely, by providing with two chambers of high and low vacuum, ion and electron guns, a common projection port, monitors for space current and absorbing current, and a heating stage, and by detecting the position and extension by the monitors to move the heating state and to vary the beam amplitude. CONSTITUTION:An Si substrate 1 which is put on a heating stage 2 is positioned precisely. Beams emitted from an electron gun 3 and ion gun 4 which are passed through optical systems 3', 4', 3'', 4'' and an optical cylinder 5 and are regulated electronically so as to share the same center axis 6 are irradiated onto the substrate 1. At this time, the beams may be reacted with particle flow 7 emitted from a particle gun 8 if necessary, processing (etching, depositing, diffusing, etc.) the substrate 1. The position displacement and extension owing to the temperature rise are detected by an absorbing current monitor 9 and space current monitor 10, and then the optical systems 3'', 4'' are corrected to position the substrate 1 precisely. The pump system is controlled within a range of 10<-4> Pa-10 Pa. For the purpose of preventing contamination from the vacuum, a two-chamber structure in which a gate 13 is mounted is adopted. Moreover, a laser 12 for reaction-promoting and a monitor 14 for detecting the film thickness and reaction advance are provided. In this structure, various processes are executed precisely in the apparatus without contamination or dust depositing. |
