CONTROL OF CHARACTERISTICS OF SEMICONDUCTOR MATERIAL

摘要

PURPOSE:To control space distribution of specific resistivity and conductive types by introducing an energy level created by a defect into a substrate crystal by local heat treatment. CONSTITUTION:A semiconductor substrate 2 is partially heated by a local heating source 1 such as a laser beam to create a defect in the heated region and the energy level created by the defect is introduced into the substrate crys tal. The silicon substrate is locally melted by the laser beam to create an oxy gen donor. The oxygen donor is one of the defects which form a donor potential in a band gap of silicon. A change of a specific resistivity is created by the defect. The specific resistivity is in inverse proportion to the donor concentra tion. As the concentration increases linearly in accordance with the increase of the laser power and the change of the oxygen donor concentration against the laser power is monotonous, it is easily controlled.